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The current path between these two terminals is called the “channel” which may be made of either a P-type or an N-type semiconductor material. These terminals correspond in function to the Collector and the Emitter respectively of the bipolar transistor.

The field effect transistor is a three terminal device that is constructed with no PN-junctions within the main current carrying path between the Drain and the Source terminals. This is also true of FET’s as there are also two basic classifications of Field Effect Transistor, called the N-channel FET and the P-channel FET. We remember from the previous tutorials that there are two basic types of bipolar transistor construction, NPN and PNP, which basically describes the physical arrangement of the P-type and N-type semiconductor materials from which they are made.

For example, high efficiency, instant operation, robust and cheap and can be used in most electronic circuit applications to replace their equivalent bipolar junction transistors (BJT) cousins.įield effect transistors can be made much smaller than an equivalent BJT transistor and along with their low power consumption and power dissipation makes them ideal for use in integrated circuits such as the CMOS range of digital logic chips. The Field Effect Transistor is a three terminal unipolar semiconductor device that has very similar characteristics to those of their Bipolar Transistor counterparts.

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